Abstract
Molecular beam epitaxy (MBE) growth of GeC epilayers on Si(0 0 1) substrates was attempted using an arc plasma gun as a novel C source for the first time. In preliminary experiments, the C beam generated by the gun was confirmed to consist mainly of 12C and to include very few microparticles. In order to improve crystalline quality and obtain a higher substitutional C content x in Ge 1− x C x epilayers, the variation in the growth mode and C incorporation with the supplied C fraction x C and growth temperature T s was investigated systematically by reflection high-energy electron diffraction, X-ray diffraction (XRD) and Raman spectroscopy analyses. At x C=7.3% and T s=400°C, the maximum x value of 2.6% in a single-crystalline structure was obtained from XRD studies. It was clarified that use of the arc plasma gun and enhancement of non-equilibrium growth play important roles in the incorporation of substitutional C and in restraining C-cluster formation in the MBE growth of GeC/Si.
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