Abstract
We report on the MBE growth and X-ray characterization of Si 1 − y C y Si 1 − x Ge x superlattices (SLs). The concentrations and thicknesses of the layers were chosen such as to get strain-symmetrized superlattices, lattice-matched to the Si (0 0 1) substrates. In-situ RHEED investigations showed increasing roughness during the growth of the Si 1 − y C 6 layers and a smoothing effect of the subsequent Si 1 − x Ge x layers. Further characterizations comprised double and triple axis X-ray diffraction, X-ray refraction (XRR), and atomic force microscopy (AFM). Dynamical simulations of the various X-ray configurations yielded the structural parameters of the SLs as well as information on the morphological and replication properties of the interfaces. With increasing carbon content we found an overall interface roughening concomitant with a significant decrease of the replication length. Lateral correlation length fits were compared with AFM-measurements, which give a more detailed picture of the interface morphology as long as the replication lengths are large.
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