Abstract
We have prepared Ge 0.92Mn 0.08 thin films by molecular beam epitaxy (MBE) on semi-insulating (0 0 1) GaAs substrates and investigated their transport and magnetic properties. We have found out that the resulting properties of the thin films are highly dependent on the substrate temperature T s. The sample grown at T s=130 °C exhibited a pronounced negative magnetoresistance and anomalous Hall effect even up to room temperature most probably due to the presence of substitutional Mn in the Ge host matrix and the formation of the Ge 5Mn 3 phase. Because these phenomena were not detected for samples grown above 130 °C, we believe that these are due to the T s dependence of Mn distribution in Ge 0.92Mn 0.08 thin films and the degree of the interdiffusion of Ge, Ga and As atoms at the Ge 0.92Mn 0.08/GaAs interface.
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