Abstract
GaMnAs epitaxial films with high Zn incorporation level were prepared by molecular beam epitaxy. Our results indicate an increasing hole concentration p accompanied by decreasing Curie temperature T C and transition towards metallic behavior of the epitaxial film properties with increasing level of Zn incorporation. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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