Abstract
Cr-doped ZnTe diluted magnetic semiconductor thin films were grown on semi-insulating GaAs [001] substrates at low temperature by solid-source molecular-beam epitaxy. Zn 1− x Cr x Te samples with Cr concentrations x = 0.026 and x = 0.141 were prepared. The magnetization versus magnetic field ( M– H) measurement showed a clear hysteresis loop at low temperature for these samples. For higher Cr doping with nominal Cr concentration of x > 0.18, we obtained a Curie temperature of 365 K; the highest reported so far for thin film sample. However, this strong ferromagnetic momentum could possibly be due to Cr 1− δ Te precipitate in the Cr-doped ZnTe system.
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