MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

R R Reznik,I V Ilkiv,I P Soshnikov,G E Cirlin,A I Khrebtov,E V Nikitina,A V Osipov,K P Kotlyar,S A Kukushkin

doi:10.1155/2018/1040689

Abstract

The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

Highlights

One of the crucial aims to nanotechnology is the creation of nanoscale building blocks of various sizes and shapes [1]
We introduce PA-MBE NWs growth on Si (111) substrate with nanometer silicon carbide buffer layer, which was formed on the Si substrate using chemical substitution atoms method [14]
It was found that the intensity of the photoluminescence signal of the GaN NWs on SiC/Si(111) substrate integrally more than 2 times higher than that of the best structures of GaN NWs grown on Si(111)

Summary

Introduction

One of the crucial aims to nanotechnology is the creation of nanoscale building blocks of various sizes and shapes [1]. GaN nanowires (NWs) represent unique nanostructures that can be used for high mobility field effect transistors, photodetectors, and miniaturized UVblue nanolasers [2, 3]. Due to their high surface to volume ratio, nanowires are potential candidates for sensor applications and they are under intensive study in a view of the generation of solar cells. InN exhibits the narrowest band gap (for nitrides) which can be down to 0.67 eV at low temperatures, the lowest effective electron mass, and the highest peak drift velocity and electron mobility [4,5,6,7]. Thereby, InN is an attractive material for applications in transistors, terahertz emitters, and detectors [6]

Methods

Results

Conclusion