Abstract
AbstractZn0.91Cd0.09Se/Zn0.88Mn0.12Se wire array embedded in a ZnSe barrier layer has been grown on GaAs vicinal substrate by MBE under step‐flow growth condition, and polarized photoluminescence (PL) and reflectance spectra have been measured in external magnetic field in the Voigt geometry with magnetic field parallel and perpendicular to the wire. The sample shows strong luminescence due to exciton recombination in the Zn0.91Cd0.09Se QWRs. Zeeman shift of the luminescence is anisotropic, that is, the energy shift depends on the direction of the magnetic field and the direction of electric field of emitted light. In reflectance spectra two dips are observed. One is active to the light polarized perpendicular to the magnetic field and the other is active to the light parallel to the magnetic field. The effect of energy separation between the two dips on the PL polarization is studied, and relative contribution of the heavy‐ and light‐hole component to the hole states responsible for the two transitions is discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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