Abstract
Molecular beam epitaxial (MBE) growth of novel hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes (LEDs) is presented. The ferromagnetic p-type (Ga,Mn)As layers were grown on i-(In,Ga)As/n-GaAs structures to form LED structures. The current–voltage ( I– V) characteristics and the electroluminescence (EL) spectra were measured at temperatures from 5 K to room temperature. In comparison to the properties of control samples consisting of all non-magnetic p-GaAs/(In,Ga)As/n-GaAs LEDs, the EL intensity of ferromagnetic/non-magnetic pn junction LEDs exhibited unique temperature dependence.
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