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Abstract
ZnS 1− x Te x and Zn 1− y Mg y S 1− x Te x epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS 1− x Te x contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn 1− y Mg y S 1− x Te x layers were applied to cladding layers of the LED, and bright luminescence was observed.
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