MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section

Abstract

A novel GaAs–AlGaAs vertical-cavity surface-emitting laser (VCSEL) design based on the coupled cavities and all-epitaxial non-transparent filter section (F-VCSEL) was proposed. The key point of this approach is that the absorption filter selectively provides the high losses for off-resonance optical modes and relatively narrow transparency window (∼1.3 nm). The broad area (100 μm×500 μm) F-VCSEL devices with a metal contact grid on the top demonstrate the 0.85 μm range narrow line emission and the Gaussian-like far-field patterns, which confirm the possibility of the achievement of the surface-emitting lasing by using the all-epitaxial wavelength-selective filter concept. Single-mode operation in wide pump current range in F-VCSEL was achieved at the larger oxide current aperture (3 μm) as compared with that for the conventional oxide-confined VCSEL (1 μm).