Abstract
We have employed molecular-beam epitaxy (MBE) for the growth of mid-infrared (MIR) type-II quantum-well laser structures. These lasers consist of strain-balanced InAs/InGasb/InAs/AlSb type-II quantum wells lattice-matched to the AlSb cladding layers. We have demonstrated optically pumped lasers emitting from 3 to 4.3 μm under pulsed operation. For the 3.2-μm lasers, stimulated emission was observed at temperatures up to 350 K. The characteristic temperature T 0 at operation temperatures above ambient was 68 K. Here, we discuss the optimization of the MBE growth of MIR type-II quantum-well lasers, including substrate temperatures, V/III beam-equivalent pressure ratios, and shutter sequencing for better interface control and laser performance.
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