Abstract
An experimental investigation is carried out into the electrical properties of doped MBE-grown GaAs films on GaAs(111)A substrates that may be misoriented toward a given direction, with silicon being the only dopant. Single n- and p-type films and planar pn junctions are produced on perfectly oriented substrates, the junctions being tested as part of diodes. In addition, δ-Si doped GaAs multilayers are grown on substrates misoriented by 0.5°, 1.5°, or 3° toward [21¯1¯]. The sheet-resistivity anisotropy of the multilayers is revealed and measured.
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