Abstract
We present recent progress in the growth of nitride based laser diodes (LDs) made by Plasma Assisted Molecular Beam Epitaxy (PAMBE). In this work we demonstrate continuous wave (cw) LDs grown by PAMBE operating in the range 430–460nm. The LDs were grown on c-plane bulk GaN substrates with threading dislocation densities (TDDs) ranging from 103cm−2 to 107cm−2. The low TDDs allowed fabrication of cw LDs with the lifetime exceeding 2000h at 10mW of optical output power. The maximum output power for these LDs was 80mW. We used AlGaN cladding-free design of LDs with InGaN waveguides. The key element to achieve lasing for wavelengths above 450nm was substantial increase of the nitrogen flux available for growth in PAMBE. The increase of N flux is beneficial for growth of efficient InGaN QWs, which allowed demonstration of optically pumped lasing from single quantum well InGaN laser structures at 501nm.
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