Abstract
The Matteucci effect in Co-Si-B amorphous wires with negative, magnetostriction was studied. It was predicted on theoretical grounds and confirmed experimentally that the Matteucci pulse voltage appearing across the wire ends is proportional to the length of the propagating domain boundary in a manner opposite from the dependence of the pulse voltage associated with Barkhausen discontinuities. An attempt was made to increase the Matteucci voltage by heat treatment. Simultaneous application of torsion and tension during annealing was found to increase the Matteucci voltage by one order of magnitude over that of as-quenched wires.
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