Abstract
Copper matrix composites containing antiperovskite manganese nitrides with negative thermal expansion (NTE) were formed using pulsed electric current sintering. Energy dispersive X-ray spectroscopy revealed that the chemically reacted region extends over 10 μm around the matrix–filler interfaces. The small-size filler was chemically deteriorated during formation of composites and it lost the NTE property. Therefore, we produced the composites using only the nitride particles having diameter larger than 50 μm. The large-size filler effectively suppressed the thermal expansion of copper and improved the conductivity of the composites to the level of pure aluminum. The present composites, having high thermal conductivity and low thermal expansion, are suitable for practical applications such as a heat radiation substrate for semiconductor devices.
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