Abstract
The estimation is based on the intrinsic transistor large-signal lumped-element equivalent circuit with the parameters and spline characteristics calculated by means of a two-dimensional model of the transistor active region. This model includes the quasi-hydrodynamic model of hole transport (with very low mobility on the surface), equations of the electric field, and dipole model of the hydrogen-terminated diamond surface. The object of simulation is the structure of a real 100-nm-long gate single-crystal diamond transistor, which is recovered by fitting the simulated output current---voltage characteristics to the experimental. Using the frequency-domain simulation of a power amplifier with such a transistor, a number of RF parameters (power-added efficiency, output power, and others) are calculated as functions of the maximum available power of the RF generator at frequencies of 30 and 60 GHz.
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