Abstract
The possibility of using lasers to form semiconductor materials (cadmium and mercury tellurides) with a predetermined width of the band gap was explored using mathematical modeling. A one-dimensional physicomathematical model based on diffusion and heat conduction equations and transport equations for laser radiation with temperature- and concentration-dependent coefficients was used. Self-similar solutions were used in order to obtain certain qualitative regularities of the processes. In the general case the corresponding system of partial differential equations was integrated numerically.
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