Mathematical aspects of simulating efficient RF operation of HEMTs

Abstract

We consider the mathematical basis of our earlier developed program for the time domain analysis of the amplifier’s electrical circuit whose nonlinear part (intrinsic transistor) is given by the two-dimensional model including the electron velocity overshoot and avalanche multiplication of charge carriers. This program is quite economical (we execute it on personal computers) because we modified classical numerical methods used by us, such as the Samarskii locally one-dimensional scheme for parabolic partial differential equations and Newton method for time domain simulations.