Abstract
New experiments made possible with a commercial transmission electron microscope (TEM) equipped with a high-resolution electron energy loss spectrometer (EELS) are presented. With this commercial system, a 100 meV energy resolution using a sub 2 nm probe or 500 meV at a 0.20 nm probe are possible, in combination with other modern techniques available for TEMs. In this paper a number of explorative examples of the first results are shown. The benefit of the increased resolution for detecting more details in near edge structures are shown for the Ti K edge in TiO 2 (brookite) and for the N K edge in cubic and hexagonal GaN. The bandgap of GaN is studied in both crystal structures, as well as the dependency of the low-loss spectrum on the momentum transfer direction in diffraction mode.
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