Abstract
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.
Highlights
Nowadays, the wide bandgap semiconductors SiC and GaN are considered as the basis of a huge advancement in power electronics, enabling the definition of a game-changing generation of devices with superior performance if compared with that currently achieved by traditional Si-based devices [1]
This is due to the outstanding physical properties of this class of materials, such as wide bandgap, high critical electrical field and high saturation velocity, that push forward the limits reached by Si-based power electronics [2]
After a short discussion on the fundamentals of the metal/4H-SiC Schottky contact formation and the typical electrical characterization by I–V measurements, we pointed out the well-established technology of Schottky diodes, using Ti or Ni-based Schottky barriers
Summary
The wide bandgap semiconductors SiC and GaN are considered as the basis of a huge advancement in power electronics, enabling the definition of a game-changing generation of devices with superior performance if compared with that currently achieved by traditional Si-based devices [1]. This is due to the outstanding physical properties of this class of materials, such as wide bandgap, high critical electrical field and high saturation velocity, that push forward the limits reached by Si-based power electronics [2]. The core of an SBD is the metal/semiconductor junction (the so-called Schottky contact) anTdhethceoprreopoef ratinesSoBfDthiiss styhsetemmemtaul/sstebmeiccaornedfuulclytoirnvjuenstcitgioatned(tthoeasssoe-scsalalendd oSpchtiomttikzey the conetalecct)traicnadl ptherefoprrmopanercteieosf othf ethwishosylestdeemvicmeu[9st].be carefully investigated to assess and optimizeOtvheeretlhecetryiceaalrsp,edrfioffremreanntcaepopfrtohaecwhehso,lreadnegvinicge f[r9o].m the choice of materials for the ScOhvoetrtktyhebayreraierrs,fodrifmfearteinotnatpopsreomacichoensd, uracntogrintgreafrtommentthseocrheoviecen ocof nmsiadteerriianlgs tfhoer dtheevice Schloatytkoyutb, ahrarvieer bfoeermn adteiovnelotopesdemtoiciomnpdruocvtoeratnrdeagtmaiennctos notrroelvoenn tchoensSicdheortintkgytchoendtaecvticperoplayoeurtti,esh.aMveorbeeoevner,duenvceolonpveedntitooniaml mpreotvheodasnwdegreaianlsocoenxtprololreodnatshaelteSrcnhaottitvkeysocolunttiaocnts in proipmerptrieosv.inMg oanredocvoenr,troulnlicnogntvheenSticohnoatltkymbeathrroiders sywseterme sa. lso explored as alternative solutionsIninthiims pparopveri,nagftaenrda bcorinetfrdoilslicnugsstihoenSocnhtohtetkfuynbdaarmrieernstaylssteomf tsh.e metal/4H-SiC Schottky baInrritehrisfoprampaetri,onaftaenrdaitbsrieelfecdtriisccaulsscihoanraocntertihzeatfiounn,dawmeewntialllsgiovfethane omveetravl/i4eHw-SoinC the Schcouttrkryenbtamrraietrerfioarlms antidonparoncdesitssineglecsotrliuctailocnhsafroarctehreizfatbiorinc,awtioenwoifllSgcihvoetatknyocvoenrvtaiecwts toon4Hthe SciuCr.reAnfttemrwataerdiasl,sbaensdidpersotcheesscinongssoolliudtaitoends afoprptrhoeacfhabesr,icwateiowniollf pSrcehsoetntkt ya cvoanrtiaectytsotfo the 4H-nSoiCn.coAnfvteernwtiaorndasl, mbeestihdoedssthperocpoonseodlidinatleitderaaptupreoatochceosn, twroel wthiellSpcrheostetnktyabvaarrietryporof ptheerties nonfcoornsvpeenctiifiocnaapl mpleictahtoiodnssp. roposed in literature to control the Schottky barrier properties for specific applications
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