Materials and Electrical Characterization of Er ( Si1 − xGex ) 2 − y Films Formed on Si1 − xGex(001) ( x = 0 – 0.3 ) via Rapid Thermal Annealing

Abstract

We studied erbium germanosilicide films formed on relaxed p-type virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of . Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial with orientation relationship - or . Schottky barrier height, , of the contact was found to decrease from with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, , from .