Abstract
Abstract Silicon carbide is a superior material for the manufacturing of semiconductors. This is where the project on the gaseous phase synthesis of SiC components made of carbon precursors comes in. On the basis of graphite substrates and a reaction with thermally evaporated silicon monoxide in the CVI process (chemical vapor infiltration), silicon carbide with strongly process dependent structural composition is formed. The process can be used for the coating of C substrates as well as for the manufacturing of complex components. With the help of new approaches in process development and via detailed materialographic microstructural analysis, the understanding of gaseous phase synthesis was promoted. The transition of different carbon structures in equivalent silicon carbide structures was verified.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
