Abstract
Process variations, whose impacts on material characteristics and geometric structures of integral circuit are not ignorable, have been one of major issues of nowadays design and verification. A material variation aware approach for parasitic capacitance extraction based on stochastic finite element method is presented. The intrusive spectral stochastic finite element method (SSFEM) derived from Neumann series expansion, polynomial chaos and stochastic field theory is reviewed and demonstrated through an electrostatic system with multiple dielectric domains and multiple conductors. A comparison analysis is made between SSFEM and random sampling method such as Latin hypercube sampling (LHS) based on deterministic finite element method.
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