Abstract
The growth of a nanovoid in single-crystal copper has been studied via molecular dynamics (MD) method. The objective is to build the correlation between material transport pattern and dislocation structures. MD results are examined by characterizing the material transport via the “relative displacement” of atoms, where the homogenous elastic deformation has been excluded. Through this novel approach, we are able to illustrate the feasibility of void growth induced by shear loops/curves. At a smaller scale, the formation and emission of shear loops/curves contribute to the local mass transport. At a larger scale, a new mechanism of void growth via frustum-like dislocation structure is revealed. A phenomenological description of void growth via frustum-like dislocation structure is also proposed.
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