Abstract
Abstract Diffusion coefficients of nickel in nickel, and of nickel and silicon in Fe-20Cr-60Ni and Fe-20Cr-20Ni have been measured by SIMS after irradiation with 300 keV Ni-ions. The irradiation temperature was varied between 293 K and 966 K, the displacement rate between 1.2 × 10 −4 dpa/s and 3.2 × 10 −2 dpa/s. The diffusion coefficients of all tracer/matrix-combinations are temperature dependent above 800 K. At these temperatures nickel diffuses about ten times faster in nickel than in Fe-20Cr-60Ni and about three times faster than in Fe-20Cr-20Ni. In the alloys silicon diffuses about a factor of five as fast as nickel. The data are discussed with a simple rate equation model. It will be shown that the effective sink concentration in nickel during heavy ion irradiation decreases above 900 K strongly with increasing temperature and that the production rate of freely migrating defects has a temperature independent value of only 1.5% of the calculated displacement rate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
