Abstract
Based on statistics theory and contact theory, a material removal model for predicting polishing quality in chemical-mechanical polishing (CMP) of multi-material surface is developed. The contacts of pad-workpiece and pad-particle-workpiece are characterized by the elastic–plastic contact mechanism. The material removal is considered to be the sum of the contributions from two movement modes of particles. Within the model, linear material removal volume (LMRV) can be determined as a function of the interactions of workpiece, pad and slurry. The model also determines the relationship between LMRV and roughness. It is found that polishing pad and parameters of polishing conditions have significant effects on the polishing quality. The experimental results show that chemical reagents contribute quite differently to multi-material end-face planarization. The proposed model reveals insights into improvement of the polishing quality of multi-material surface such as fiber array end-face.
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