Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry

Abstract

The material removal mechanism of copper in a periodate-based slurry during barrier layer chemical mechanical polishing (CMP) has not been intensively investigated. This paper presents a study of the copper surface film chemistry and mechanics in a periodate-based slurry. On this basis, the controlling factor of the copper CMP material removal mechanism is proposed. The results show that the chemical and electrochemical reaction products on the copper surface are complex and vary considerably as a function of the solution pH. Under acidic conditions (pH 4) the copper surface underwent strong chemical dissolution while the corrosion was mild and uniform under alkaline conditions (pH 11). The corrosion effect was the lowest in near neutral solutions because the surface was covered with non-uniform Cu(IO3)2·H2O/Cu-periodate/copper oxides films, which had better passivation effect. The surface film thickness and mechanical removal properties were studied by AES and AFM nano-scratch tests. Based on the combined surface film analysis and CMP experiment results, it can be concluded that the controlling factor during copper CMP in a periodate-based slurry is the chemical-enhanced mechanical removal of the surface films. The periodate-based slurry should be modified by the addition of corrosion inhibitors and complexing agents to achieve a good copper surface quality with moderate chemical dissolution.