Year-end Sale % OFF 
Abstract
Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in “atop” positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO.
Highlights
Expansion of fundamental scientific knowledge supported by development of theoretical approaches, deposition strategies, and advanced characterization drives rational design of materials at nano scale
This is recognized as a materials science platform that brings about conceptually new performance with well-established semi conductor materials which have been subjected to a variety of nano structures
The formation of this conceptually new 2D indium oxide (InO) was harvested through targeted intercalation of In atoms and deposition kinetics at the graphene/SiC interface
Summary
Expansion of fundamental scientific knowledge supported by development of theoretical approaches, deposition strategies, and advanced characterization drives rational design of materials at nano scale. This is recognized as a materials science platform that brings about conceptually new performance with well-established semi conductor materials which have been subjected to a variety of nano structures. Nanostructures such as two-dimensional quantum wells, onedimensional quantum wires/rods, and zero-dimensional quantum dots can be stated as being among the most typical examples. An array of obliquely aligned InN nanowires has been demonstrated for the fabrication of efficient nanogenerators to convert mechanical energy into electricity [4]
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
