Abstract
InAlAs layers and InGaAs/InAlAs quantum well heterostructures, grown by molecular beam epitaxy on vicinal (1 1 1)B InP substrates, exhibited extensive surface step bunching, compositional inhomogeneities and degraded crystalline quality, with variations depending on the exact misfit strain and growth conditions. Silicon and beryllium doping of (1 1 1) InAlAs behaved similarly to the (1 0 0) case but a different predominant deep level was detected in n-type (1 1 1) material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
