Abstract
We report in CPEM 2012 the preparation of the micromechanical cleavage (MC) and the chemical vapor deposition (CVD) graphene films and the fabrication of the quantum Hall resistance (QHR) devices on these films. Graphene films are on the SiO 2 /Si substrates. Spectroscopic Raman analysis indicates monolayer graphene films are obtained. Hall bar structures are formed on graphene films by e-beam lithography, metallization, and oxygen plasma etching.
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