Material level analytical model of total ionizing dose induced DC characteristics shift for FDSOI IC design

Abstract

A charge build-up model implemented in a netlist coupled with L-UTSOI model, which takes into account the deposited dose as an input parameter, is presented for Fully Depleted Silicon On Insulator (FDSOI) transistors. The model is based on the rate equations governing the physical processes of the charge build-up in the oxides. Based on in-house irradiation measurement, our model is calibrated on experimental Id-Vg characteristics in order to find the model parameters and extract the contribution of the oxide and interface trapped charges.