Abstract
Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate using a buffer layer, is analyzed based on microscopic many-body theory (MBT) for mid-infrared light sources based on Si photonics. MBT can consider a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any artificial fitting parameters, such as a relaxation time, used in conventional analysis. Not only $\Gamma $ - but also carrier distributions in L-points are considered for the gain analysis. Using MBT, the quantum well structures maximizing the material gain and the differential gain at the threshold are investigated in terms of the well thickness, the strain, and the energy difference of quantum states between $\Gamma $ - and L-points.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
