Abstract
This paper discusses the optimum pore arrangements on the porous low-k dielectrics through Genetic Algorithm (GA) and U* analyses. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of porous low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to develop porous low-k dielectrics that have low dielectric constant and high mechanical strength. To make optimum pore arrangements, GA was introduced and porous structures in the dielectrics were made. Also, the obtained results were evaluated by the index U*. The index U* expresses a degree of load transfer or dielectric force transfer. Through those analyses, the pore arrangements with low dielectric constant and high stiffness were proposed. The obtained results showed that pores were aggregated and arranged obliquely. This is because these structures have an advantage to transfer the load and hinder the dielectric force transfer efficiently.
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