Abstract
ABSTRACTLow temperature silicon selective epitaxial growth on patterned oxidized wafers is becoming crucial to ultra large scale integration (ULSI) technologies. Low temperature processes can reduce dopant redistribution via solid state diffusion so that a sharp transition region can be obtained. This paper presents material characterization of epitaxial films grown on patterned oxidized wafers by ultralow pressure chemical vapor deposition (ULPCVD) from SiH4/SiF4/H2 (≤ 10 mTorr), in which SiF4 was used to explore its capability for selective epitaxial growth. The deposition temperature is 800°C. The effects of the SiF4 addition to SiH4/H2 are discussed. Defects in epitaxial layers resulting from a high composition of the SiF4 during deposition were characterized. Results of in–situ surface cleaning using a SiF4/H2 plasma are also presented.
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