Abstract
Abstract A novel organometallic vapor phase epitaxy reactor was designed and fabricated to achieve good material quality, high deposition efficiency, and uniformity over large-area substrates. GaAs epitaxial layers were grown under various conditions to study material characteristics such as morphology, mobility, carrier concentration, minority carrier lifetime and uniformity. Effective minority carrier lifetimes of 120 ns have been obtained in this reactor and methods of obtaining further improvements in this parameter are discussed. Doped and undoped GaAs epitaxial layers were grown on 2″ diameter substrates to study large-area uniformity characteristics. Thickness non-uniformity was founf to be dominated by edge effects due to the presence of the susceptor lip which supports the samples. Doping non-uniformity was caused by variations in surface temperature over the water.
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