Abstract
FinFET is a promising device concept towards the 32 nm CMOS technology node and beyond as it combines the benefits of multi-gated architecture, intrinsically having superior scaling behavior, with a highly manufacturable process. The present paper will deal with material aspects of the SOI FinFET integration. We investigate scalability, performance and variability of high aspect ratio trigate FinFETs fabricated with 193nm immersion lithography and conventional dry etch. The effect of gate stack conformality on device performance is studied. The use of ion implantation for extension and the selective epitaxial growth of Si to achieve larger contact area on the source/drain areas are discussed from a materials perspective.
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