Abstract
OTS Selection Devices Min Kyu Yang, Gun Hwan Kim and co-workers, in article number 2200161, successfully demonstrate a GeSeTe ovonic threshold switch (OTS) selector applied to a 3D cross-point structure. As a volatile memory, this OTS memory exhibits fast operation speed, low leakage current, and high endurance. OTS is also used as neurons in 3D cross-point structures for neuromorphic computing applications.
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