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Abstract
A systematic study of MOCVD grown InP based heterostructures and their application in HEMT technology is reported. The heterostructures are realized by Metal-Organic-Chemical-Vapor-Deposition (MOCVD) which is a well suited for production growth technique. The impact of growth temperature and AsH 3 flow rates on the material properties was investigated and optimized. To improve the device performance even further, Fe-doped InAlAs is also studied. By optimizing the growth conditions of InAlAs InGaAs heterostructure, we demonstrates high performance 1 μm gate length InAlAs InGaAs HEMTs which show f t of 60 GHz and f max of 120 GHz. By applying the same submicron technology on MOCVD HEMT layers grown by a commercial vendor as on Molecular-Beam-Epitaxy grown layers, we could demonstrate equivalent f t (180 GHz) and f max (220 GHz) performance.
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