Abstract
We grew and characterized Zn- and Si-doped In0.48Ga0.52P grown on (001) GaAs substrates misoriented by θS = 0°, 2°, 6°, and 10° toward (111)A using metal-organic chemical vapor deposition. The dopant incorporation efficiency is improved with higher θS because of a larger surface free energy. The lattice constant of InGaP is increased with higher doping concentration, whereas it is decreased with higher θS as a result of reduced CuPt-type ordering in InGaP. This reduced ordering with θS from 0° to 10° is supported by a bandgap increase of ~60 meV. The open-circuit voltage of InGaP solar cell with θS = 10° is more than 100 meV higher than that with θS = 2° due to the increased bandgap and the decrease of the ordering-related defects. Besides, a larger CuPt-type ordering results in a greater reduction of the thermal activation energy of InGaP solar cell.
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