Abstract
Room-temperature semiconductor radiation detectors, such as CdZnTe (CZT) and CdTe detectors, are being developed and grown worldwide owing to their high performances as a gamma-ray detector. A 2″ CZT ingot was grown using a 6-zone low-pressure (LP) Bridgman furnace at the Korea Atomic Energy Research Institute (KAERI). To increase the resistivity, indium (In) was doped at 5 ppm and 7 ppm, respectively. Material analysis results obtained by using inductively coupled plasma mass spectrometry (ICP-MS), X-ray diffractometry (XRD), and an infrared (IR) scope system were compared with the I-V results with respect to the location on the grown ingots and doping concentration. A (1,1,1) orientation and 1.41 × 1011 Ω·cm resistivity were measured in the middle part of the ingot. In addition, Te inclusions were also homogeneously shown. The variation in the I-V characteristics with respect to the preparation conditions of the crystals was also addressed.
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