Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures

Abstract

In semiconductor samples with a low density of free charge carriers the current response to an intense electromagnetic pulse is weak and can be treated as a perturbation in the finite-difference-time-domain calculation of the electromagnetic field. Up to first order the electric field that drives the particles does not depend on their density and the particles can be simulated independently. This opens the door for massively parallel Monte Carlo simulations that can be processed efficiently on a computer cluster and a large number of particles can be simulated resulting in a very low noise level. By this full-band Monte Carlo finite-difference-time-domain approach the generation of higher harmonics in p-doped silicon at cryogenic temperatures is investigated. It is found that the higher harmonics are mostly due to the warped valence bands, which are discretized on adaptive unstructured tetrahedral grids in the k-space to avoid numerical artifacts.