Abstract
Al x Ga 1-x N having square trenches on its surface showed a different mass transport (MT) property for each AlN molar fraction. We also found that the MT process was interrupted at a certain stage, after which no MT occurred. The volume of the transported region decreased with increasing AlN molar fraction. MT was not observed in Al x Ga 1-x N with x higher than 0.06. The photoluminescence (PL) peak from the transported region measured by micro-PL mapping was 363 nm in all samples, which indicates that the transported region was composed of GaN rather than Al x Ga 1-x N. The root mean square surface roughness of Al x Ga 1-x N after annealing drastically decreased with increasing AlN molar fraction. This is due to the thermal stability of AlN and low diffusibility of Al on the surface. As a result, the terrace region became AlN rich, which caused interruption of MT.
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