Abstract

Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm2 V−1 s−1. Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior.

Highlights

  • Polymeric dielectrics are regarded as key components in the realization of organic electronics for the fabrication of scalable device arrays and integrated circuits [1,2]

  • Compared with conventional inorganic-based dielectric materials employed in the modern electronic industry, polymeric dielectrics are capable of providing excellent mechanical flexibility, good solution processability, and better compatibility with various types of substrates and organic channel materials [3,4]

  • The first polyimide of significant commercial importance ‘Kapton’ was pioneered in the 1950s by workers at Dupont, who developed a successful route for the synthesis of high-molecular-weight PI involving a soluble polymer precursor (poly(amic acid) (PAA)) [15]

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Summary

Introduction

Polymeric dielectrics are regarded as key components in the realization of organic electronics for the fabrication of scalable device arrays and integrated circuits [1,2]. The first polyimide of significant commercial importance ‘Kapton’ was pioneered in the 1950s by workers at Dupont, who developed a successful route for the synthesis of high-molecular-weight PI involving a soluble polymer precursor (poly(amic acid) (PAA)) [15] To date, this route continues to be the main route for the production of most PIs, enabling mass production. We synthesized mass-produced solution-processable conventional PAA (soluble PI precursor) through the factory method, and fabricated PI thin films through the imidization of PAA solution for polymeric dielectric layers of OFETs. To confirm the suitability of the fabricated PI films as gate dielectrics of OFETs, various characteristics, including surface roughness, dielectric constant (k), and leakage current properties were identified. We expect that this study shows that many types of PIs reported so far have the potential to be industrially produced and used in device fabrication, and suggests a future direction for practical organic electronics in industrialization

Preparation of Materials
Device Fabrication
Conclusions
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