Abstract
The decomposition reaction of trimethylgallium (TMG) with a GaAs (100) surface under ultra-high vacuum was studied by mass-spectrometry and reflection high-energy electron diffraction (RHEED). The reaction depends on the substrate temperature: below 300°C, the reaction does not occur effectively; between 400 and 500°C, one monolayer adsorption of Ga-containing species is suggested. Above 500°C, the reaction occurs in two stages. The reaction rate of TMG on As-stabilized surface is faster than that on Ga-stabilized surface. The deposition of multilayers of Ga is also indicated above 500°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
