Abstract
The decomposition reaction of trimethylgallium (TMG) with a GaAs (100) surface under ultra-high vacuum was studied by mass-spectrometry and reflection high-energy electron diffraction (RHEED). The reaction depends on the substrate temperature: below 300°C, the reaction does not occur effectively; between 400 and 500°C, one monolayer adsorption of Ga-containing species is suggested. Above 500°C, the reaction occurs in two stages. The reaction rate of TMG on As-stabilized surface is faster than that on Ga-stabilized surface. The deposition of multilayers of Ga is also indicated above 500°C.
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