Abstract
The doping of OMVPE GaAs with silicon through use of disilane has been studied as a function of arsine concentration, alkylgalliums (trimethylgallium and triethylgallium), gas flow rate, reactor pressure, and temperature, using a low pressure reactor. Reaction products were analyzed by quadrupole mass spectroscopy (QMS). The apparent activation energy for disilane decomposition was investigated, and reactions concerning disilane were discussed. A new mechanism in which Si doping was accomplished by the SiH3AsH2 decomposition on adsorption sites was then proposed. This mechanism can qualitatively explain dependences of doping on flow speed, growth temperature, and AsH3 concentration. In addition, it also accounts for the difference in Si doping sites between OMVPE and MBE GaAs layers.
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