Abstract
We study the evolution with pressure P and band filling y of the heat capacity, Hall coefficient, and resistivity at the approach to the T→0 Mott-Hubbard metal-insulator transition (MIT) in highly correlated V_(2-y)O_3. Under P, the electronic effective mass m* diverges at the MIT with a negligible change in carrier concentration n away from half-filling. Conversely, in the doped system m* actually decreases as the MIT is approached, while n increases linearly with y. The low-T magnetic order in the metal helps us deconvolute contributions from charge correlations and spin fluctuations.
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