Abstract
Mass-dispersive recoil spectrometry has been employed to study the influence of annealing conditions in ion-beam-synthesized silicon oxynitride structures prepared by implantation of 1.8×1018 and 1×1017 200 keV 16O+ and 14N+ ions cm−2, respectively, at approximately 600 °C. Subsequent annealing at 1200 and 1300 °C leads to redistribution of the implanted oxygen to form a buried oxide layer with nitrogen segregation to the buried SiO2/Si interfaces. Implantation with N+ subsequent to O+ followed by annealing at 1200 °C for 2 h was found to lead to both a lower oxygen content and lower channeling detectable defect concentration in the overlying silicon film than if the order of implantation was reversed. No significant dependence on order of implantation was observed after annealing at 1300 °C for 5 h.
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