Abstract
ABSTRACTMaskless patterning of Mo and Si was done by implanting 50 keV focused Ga+ ion beam and by plasma etching using CF4 gas. The implantation is done to modify the chemical properties of the sample surface. It was found that Mo films became etch-resistant for the plasma etching after implantation at a dose higher than 4×1015 /cm2. Si crystals showed a positive tone pattern due to a radiation enhanced etching at a dose lower than 5x1016/cm2. At higher doses, the etching rate decreased and above 8 x 1016/cm2, no etching was observed in the implanted region. Patterns with a thickness of a several hundred nanometers were formed by the present maskless patterning technique.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
