Abstract
ABSTRACTMetalization patterns of micron size were deposited chemically on GaAs wafers with no litography masks by means of controlled laminar flow of liquid NaOCl. Iron used for metalization was dissolved in NaOCl wafer solution. To interrupt the continuous deposition of metal on semiconductor surface, the acrylic polymer was also dissolved in the liquid. Iron deposition appears to follow given crystalographic direction <110> creating a set of parallel lines in <110> direction. Spacing between the lines and width of the metallic lines are controlled by the temperature of the process, speed of liquid flow and percentage of polymer present in the solution.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
