Abstract
The masked thermal oxidation of GaAs was carried out successfully with stripe Cr-Au metal film as a mask. The oxidation rate of Ga1−xAlxAs was found to be much smaller than that of GaAs; this fact means that the thermal oxidation process is selective for the GaAs-Ga1−xAlxAs multilayer structure. By means of this masked and selective thermal oxidation (MSTO) technique, the stripe optical waveguides of GaAs and stripe GaAs-Ga1−xAlxAs double-heterostructure (DH) lasers were fabricated. A demonstration of the stripe guide and some performance of stripe DH lasers are presented.
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